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| polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T C= 25 C ) Total Device Dissipation 10 Watts Junction to Case Thermal Resistance o 15.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30 V 0.8 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 50 TYP 1.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.20 A, Vds = 12.5 V, F = Idq = 0.20 A, Vds = 12.5 V, F = 850 MHz 850 MHz VSWR Relative Idq = 0.20 A, Vds = 12.5 V, F = 850 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 0.2 2.00 2.30 7.5 1.2 8.0 MIN 40 0.2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.01 A, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.02 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 1.60 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 06/19/2000 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com P121 POUT VS PIN GRAPH P121 PIN VS POUT F=850 MHZ; IDQ=0.2A; VDS=12.5V CAPACITANCE VS VOLTAGE F2C 1 DIE CAPACITANCE 2 1.8 1.6 1.4 POUT IN WATTS 1.2 1 0.8 0.6 0.4 0.2 0 0 0.05 0.1 0.15 PIN IN WATTS 0.2 0.25 POUT Efficiency = 40% GAIN 12.5 12 11.5 11 GAIN IN DB 10.5 10 9.5 9 8.5 8 0.3 100 10 Ciss Coss Crss 1 0 5 10 15 VDS IN VOLTS 20 25 30 IV CURVE F2C I DIE IV CURVE 10 ID & GM VS VGS F2C 1 DIE GM & ID vs VGS 2.5 2 1 Id 1.5 1 0.1 Gm 0.5 0 0 2 4 6 8 Vds in Volts Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V 10 12 14 16 0.01 0 2 4 6 Vgs in Volts 8 10 12 14 S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 06/19/2000 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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